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IGBT Module-Size:LG 106.4 X WD 61.4 X HT 29 MM
The physical construction and packaging of multiple IGBT power semiconductor dies into a single package is known as an IGBT power module.
The physical construction and packaging of multiple IGBT power semiconductor dies into a single package is known as an IGBT power module.
* SIZE: LG 106.4 X WD 61.4 X HT 29 MM
* VCES(COLLECTOR-EMITTER VOLTAGE): 1200 V
* IC(CONTINUOUS DC COL LECTOR CURRENT): 450 A AT 100 DEG C AND 520A AT 25 DEG C
* ICRM(REPETITIVE PEAK COLLECTOR CURRENT): 900 A
* PTOT: 2400 W, EMITTER CONTROLLED DIODE
* CASE SIZE: 62 MM MA NUFACTURER : INFINEON/SEMIKRON OR ANY OTHER REPUTED MAKE MODEL : FF450R12KE4 OR EQUIVALENT MODEL
Consumer electronics, industrial technologies, the energy industry, aerospace electronics, and transportation all make extensive use of IGBTs. The IGBT combines the straightforward gate-drive properties of power MOSFETs with the capacity of bipolar transistors to operate at high currents and low saturation voltages.
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There is 1 item in your cart.
Total products: ₹123.72
Total shipping: ₹7.00
Taxes ₹0.00
Total: ₹130.72 (tax excl.)